Silicon Metal Offgrade(Fe min. 1.5% max. 1.8%, Ca min. 0.5%) Price, CNY/mt
Nominal content Si≥97%,1.5%≤Fe<1.8%,Ca≤0.5%
13%VAT included
Traded price, taking delivery at manufacturer''s warehouse
GB/T 2881-2014 Silicon metal
Original
10,350
CNY/mt
VAT included
1,424.89
USD/mt
VAT excluded
1,260.97
USD/mt
Nov 22,2024
Start Date: 2021-07-16
End Date: ~
Price Range:10,300 ~ 10,400
Price Charts
1 D
1 W
1 M
1 Month
3 Months
6 Months
1 Year
SMM Price historical Data
Sign in or join to view historical prices and averages
Sign In
Sign Up
You may be interested
Silicon Metal Offgrade(Fe min. 1.2% max. 1.5%, Ca max. 0.3%), CNY/mt
Nominal content Si≥97%,1.2%≤Fe<1.5%,Ca≤0.3%
Silicon Metal Offgrade(Fe min. 1.8%, Ca min. 1.0%), CNY/mt
Nominal content Si≥97%,Fe≥1.8%,Ca≥1.0%
Class D semi-insulated 4-inch single crystal silicon carbide substrate, CNY/piece
4-inch crystal orientation 0001 4H-SiC double-sided polished surface roughness less than 0.2nm thickness 500+- 25 μ M Frontal Si-face D slice
Class D semi-insulated 6-inch single crystal silicon carbide substrate, CNY/piece
6-inch crystal orientation 0001 4H-SiC double-sided polished surface roughness less than 0.2nm thickness 500+- 25 μ M Frontal Si-face D slice
Class D semi-insulated 8-inch single crystal silicon carbide substrate, CNY/piece
8-inch crystal orientation 0001 4H-SiC double-sided polished surface roughness less than 0.2nm thickness 500+- 25 μ M Frontal Si-face D slice
Class D high conductivity 4-inch single crystal silicon carbide substrate, CNY/piece
4-inch crystal orientation 0001 4H-SiC double-sided polished surface roughness less than 0.2nm thickness 350+- 25 μ M N doped resistivity 0.0015-0.0025 Ω. cm front Si plane D chip
Class D high conductivity 6-inch single crystal silicon carbide substrate, CNY/piece
6-inch crystal orientation 0001 4H-SiC double-sided polished surface roughness less than 0.2nm thickness 350+- 25 μ M N doped resistivity 0.0015-0.0025 Ω. cm front Si plane D chip
Class P semi-insulated 4-inch single crystal silicon carbide substrate, CNY/piece
4-inch crystal orientation 0001 4H-SiC double-sided polished surface roughness less than 0.2nm thickness 500+- 25 μ M Frontal Si-face P slice
Class P semi-insulated 6-inch single crystal silicon carbide substrate, CNY/piece
6-inch crystal orientation 0001 4H-SiC double-sided polished surface roughness less than 0.2nm thickness 500+- 25 μ M Frontal Si-face P slice
Class P semi-insulated 8-inch single crystal silicon carbide substrate, CNY/piece
8-inch crystal orientation 0001 4H-SiC double-sided polished surface roughness less than 0.2nm thickness 500+- 25 μ M Frontal Si-face P slice